TLP161J_14 Datasheet, PDF (3/6 Pages) Toshiba Semiconductor – TOSHIBA Photocoupler GaAs IRED and Photo-Triac

Individual Electrical Characteristics (Ta = 25°C)
Characteristics
LED
Detector
Forward voltage
Reverse current
Capacitance
Peak off-state current
Peak on-state voltage
Holding current
Critical rate of rise of
off-state voltage
Critical rate of rise of
commutating voltage
Symbol
V_F
I_R
C_T
I_DRM
V_TM
I_H
dv/dt
Test Condition
I_F = 10 mA
V_R = 5 V
V = 0, f = 1 MHz
V_DRM = 600 V
I_TM = 70 mA
⎯
V_in = 240 Vrms, Ta = 85°C (Figure 1)
dv/dt(c) V_in = 60 Vrms, I_T = 15 mA (Figure 1)
TLP161J
Min Typ. Max Unit
1.0
1.15 1.3
V
⎯
⎯
10
μA
⎯
30
⎯
pF
⎯
10 1000 nA
⎯
1.7
2.8
V
⎯
0.6
⎯
mA
200
500
⎯
V/μs
⎯
0.2
⎯ V/μs
Coupled Electrical Characteristics (Ta = 25°C)
Characteristics
Trigger LED current
Inhibit voltage
Leakage in inhibited state
Capacitance (input to output)
Isolation resistance
Isolation voltage
Symbol
I_FT
V_IH
I_IH
C_S
R_S
BV_S
Test Condition
V_T = 6 V
I_F = Rated I_FT
I_F = Rated I_FT, V_T = Rated V_DRM
V_S = 0, f = 1 MHz
V_S = 500 V, R.H. ≤ 60%
AC, 1 minute
AC, 1 second, in oil
DC, 1 minute, in oil
Min Typ. Max Unit
⎯
5
10
mA
⎯
⎯
50
V
⎯
200 600 μA
⎯
0.8
⎯
pF
1 × 10¹² 10¹⁴
⎯
Ω
2500
⎯
⎯
Vrms
⎯
5000 ⎯
⎯
5000 ⎯
Vdc
R_in
+
1
V_CC
120 Ω
−
3
V_in
6
4
R_L
4 kΩ
5 V, V_CC
0V
dv/dt(c) dv/dt
Figure 1 dv/dt Test Circuit
3
2014-09-22