TLP161G_14 Datasheet, PDF (3/6 Pages) Toshiba Semiconductor – TOSHIBA Photocoupler GaAs Ired and Photo−Triac

Individual Electrical Characteristics (Ta = 25°C)
TLP161G
Characteristic
Forward voltage
Reverse current
Capacitance
Peak off−state current
Peak on−state voltage
Holding current
Critical rate of rise of
off−state voltage
Critical rate of rise of
commutating voltage
Symbol
V_F
I_R
C_T
I_DRM
V_TM
I_H
dv / dt
Test Condition
Min
I_F = 10mA
1.0
V_R = 5V
―
V = 0, f = 1MHz
―
V_DRM = 400V
―
I_TM = 70 mA
―
―
―
V_in = 120Vrms, Ta = 85°C (Fig.1) 200
Typ. Max Unit
1.15 1.3
V
―
10
μA
30
―
pF
10 1000 nA
1.7
2.8
V
0.6
―
mA
500
― V / μs
dv / dt(c) V_in = 30Vrms, I_T = 15mA (Fig.1) ―
0.2
― V / μs
Coupled Electrical Characteristics (Ta = 25°C)
Characteristic
Trigger LED current
Inhibit voltage
Leakage in inhibited state
Capacitance (input to output)
Isolation resistance
Isolation voltage
Fig.1
V_CC
dv / dt test circuit
R_in
+
− ^120Ω
1
3
Symbol
I_FT
V_IH
I_IH
C_S
R_S
BV_S
Test Condition
V_T = 3V
I_F = rated I_FT
I_F = rated I_FT
V_T = rated V_DRM
V_S = 0, f = 1MHz
V_S = 500 V, R.H.≤ 60%
AC, 1 minute
AC, 1 second, in oil
DC, 1 minute, in oil
Min
Typ. Max Unit
―
5
10
mA
―
―
40
V
―
100 300 μA
―
0.8
―
pF
1×10¹² 10¹⁴
―
Ω
2500
―
―
Vrms
―
5000 ―
―
5000 ―
Vdc
V_in
6
R_L ^～
4
2k Ω
dv / dt (c)
5V，V_CC
0V
dv / dt
3
2014-09-22