TLP161G_07 Datasheet, PDF (3/6 Pages) Toshiba Semiconductor – Photocoupler GaAs Ired & Photo-Triac

TLP161G
Individual Electrical Characteristics (Ta = 25°C)
Characteristic
Forward voltage
Reverse current
Capacitance
Peak off−state current
Peak on−state voltage
Holding current
Critical rate of rise of
off−state voltage
Critical rate of rise of
commutating voltage
Symbol
V_F
I_R
C_T
I_DRM
V_TM
I_H
dv / dt
Test Condition
Min.
I_F=10mA
1.0
V_R=5V
―
V=0, f=1MHz
―
V_DRM=400V
―
I_TM=70 mA
―
―
―
V_in=120Vrms, Ta=85°C (Fig.1) 200
Typ. Max. Unit
1.15 1.3
V
―
10
μA
30
―
pF
10 1000 nA
1.7 2.8
V
0.6
―
mA
500 ― V / μs
dv / dt(c) V_in=30Vrms, I_T=15mA
(Fig.1) ―
0.2
― V / μs
Coupled Electrical Characteristics (Ta = 25°C)
Characteristic
Trigger LED current
Inhibit voltage
Leakage in inhibited state
Capacitance (input to output)
Isolation resistance
Isolation voltage
Fig.1 dv / dt test circuit
R_in
+
V_CC
− ^120Ω
1
3
Symbol
I_FT
V_IH
I_IH
C_S
R_S
BV_S
Test Condition
V_T=3V
I_F=rated I_FT
I_F=rated I_FT
V_T=rated V_DRM
V_S=0, f=1MHz
V_S=500V, R.H.≤ 60%
AC, 1 minute
AC, 1 second, in oil
DC, 1 minute, in oil
Min. Typ. Max. Unit
―
5
10 mA
―
―
40
V
―
100 300 μA
―
0.8
―
pF
1×10¹² 10¹⁴
―
Ω
2500
―
―
Vrms
―
5000 ―
―
5000 ―
Vdc
V_in
6
R_L ^～
4
2k Ω
dv / dt (c)
5V，V_CC
0V
dv / dt
3
2007-10-01