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TLP160J_14 Datasheet, PDF (3/6 Pages) Toshiba Semiconductor – TOSHIBA Photocoupler GaAs Ired and Photo−Triac | |||
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Individual Electrical Characteristics (Ta = 25°C)
TLP160J
Characteristic
Forward voltage
Reverse current
Capacitance
Peak offâstate current
Peak onâstate voltage
Holding current
Critical rate of rise
of offâstate voltage
Critical rate of rise
of commutating voltage
Symbol
VF
IR
CT
IDRM
VTM
IH
dv / dt
Test Condition
Min
IF = 10 mA
1.0
VR = 5 V
â
V = 0, f = 1 MHz
â
VDRM = 600 V
â
ITM = 70 mA
â
â
â
Vin = 240 Vrms, Ta = 85°C (Fig.1) â
Typ. Max Unit
1.15 1.3
V
â
10
μA
30
â
pF
10 1000 nA
1.7
2.8
V
1.0
â
mA
500
â V / μs
dv / dt(c) IT = 15 mA, Vin = 60 Vrms (Fig.1) â
0.2
â V / μs
Coupled Electrical Characteristics (Ta = 25°C)
Characteristic
Trigger LED current
Capacitance input to output
Isolation resistance
Isolation voltage
Turnâon time
Fig.1 dv / dt test circuit
Rin
VCC
+
120Ω
1
ï¼
3
Symbol
IFT
CS
RS
BVS
tON
Test Condition
VT = 6 V
VS = 0, f = 1 MHz
VS = 500 V, R.H. ⤠60%
AC, 1 minute
AC, 1 second, in oil
DC, 1 minute, in oil
VD = 6â4V, RL = 100â¦
IF = rated IFT Ã 1.5
Min
Typ. Max Unit
â
5
10
mA
â
0.8
â
pF
1Ã1012 1014
â
â¦
2500
â
â
Vrms
â
5000 â
â
5000 â
Vdc
â
30
100
μs
Vin
6
RL ï½
4
4kΩ
5Vï¼VCC
0V
dV / dt (c) dV / dt
3
2014-09-01
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