TLP160J_07 Datasheet, PDF (3/6 Pages) Toshiba Semiconductor – TOSHIBA Photocoupler GaAs Ired & Photo-Triac

TLP160J
Individual Electrical Characteristics (Ta = 25°C)
Characteristic
Forward voltage
Reverse current
Capacitance
Peak off−state current
Peak on−state voltage
Holding current
Critical rate of rise
of off−state voltage
Critical rate of rise
of commutating voltage
Symbol
V_F
I_R
C_T
I_DRM
V_TM
I_H
dv / dt
Test Condition
Min.
I_F = 10 mA
1.0
V_R = 5 V
―
V = 0, f = 1 MHz
―
V_DRM = 600 V
―
I_TM = 70 mA
―
―
―
V_in = 240 Vrms, Ta = 85°C (Fig.1) ―
Typ. Max. Unit
1.15 1.3
V
―
10
μA
30
―
pF
10 1000 nA
1.7 2.8
V
1.0
―
mA
500
― V / μs
dv / dt(c) I_T = 15 mA, V_in = 60 Vrms (Fig.1) ―
0.2
― V / μs
Coupled Electrical Characteristics (Ta = 25°C)
Characteristic
Trigger LED current
Capacitance input to output
Isolation resistance
Isolation voltage
Turn−on time
Fig.1 dv / dt test circuit
R_in
V_CC
+
120Ω
1
－
3
Symbol
I_FT
C_S
R_S
BV_S
t_ON
Test Condition
V_T = 6 V
V_S = 0, f = 1 MHz
V_S = 500 V, R.H. ≤ 60%
AC, 1 minute
AC, 1 second, in oil
DC, 1 minute, in oil
V_D = 6→4V, R_L = 100Ω
I_F = rated I_FT × 1.5
Min. Typ. Max. Unit
―
5
10
mA
―
0.8
―
pF
1×10¹² 10¹⁴
―
Ω
2500
―
―
Vrms
―
5000 ―
―
5000 ―
Vdc
―
30 100 μs
V_in
6
R_L ^～
4
4kΩ
5V，V_CC
0V
dV / dt (c) _{dV / dt}
3
2007-10-01