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TLP160J Datasheet, PDF (3/6 Pages) Toshiba Semiconductor – TOSHIBA Photocoupler GaAs Ired & Photo-Triac | |||
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TLP160J
Individual Electrical Characteristics (Ta = 25°C)
Characteristic
Forward voltage
Reverse current
Capacitance
Peak off-state current
Peak on-state voltage
Holding current
Critical rate of rise
of off-state voltage
Critical rate of rise
of commutating voltage
Symbol
VF
IR
CT
IDRM
VTM
IH
dv / dt
Test Condition
Min.
IF = 10 mA
1.0
VR = 5 V
â
V = 0, f = 1 MHz
â
VDRM = 600 V
â
ITM = 70 mA
â
â
â
Vin = 240 Vrms, Ta = 85°C (Fig.1) â
Typ. Max. Unit
1.15 1.3
V
â
10
µA
30
â
pF
10 1000 nA
1.7
2.8
V
1.0
â
mA
500
â V / µs
dv / dt(c) IT = 15 mA, Vin = 60 Vrms (Fig.1) â
0.2
â V / µs
Coupled Electrical Characteristics (Ta = 25°C)
Characteristic
Trigger LED current
Capacitance input to output
Isolation resistance
Isolation voltage
Turn-on time
Fig.1 dv / dt test circuit
Rin
VCC
+
120Ω
1
ï¼
3
Symbol
IFT
CS
RS
BVS
tON
Test Condition
VT = 6 V
VS = 0, f = 1 MHz
VS = 500 V, R.H. ⤠60%
AC, 1 minute
AC, 1 second, in oil
DC, 1 minute, in oil
VD = 6â4V, RL = 100â¦
IF = rated IFT Ã 1.5
Min. Typ. Max. Unit
â
5
10
mA
â
0.8
â
pF
1Ã1012 1014
â
â¦
2500
â
â
Vrms
â
5000 â
â
5000 â
Vdc
â
30
100
µs
Vin
6
RL ï½
4
4kΩ
5Vï¼VCC
0V
dV / dt (c) dV / dt
3
2002-09-25
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