TLP131_07 Datasheet, PDF (3/9 Pages) Toshiba Semiconductor – Photo−Transistor Office Machine

Recommended Operating Conditions
TLP131
Characteristic
Symbol
Min. Typ. Max. Unit
Supply voltage
Forward current
Collector current
Operating temperature
V_CC
I_F
I_C
T_opr
―
5
―
16
―
1
−25
―
48
V
25
mA
10
mA
85
°C
Note: Recommended operating conditions are given as a design guideline to obtain expected performance of the
device. Additionally, each item is an independent guideline respectively. In developing designs using this
product, please confirm specified characteristics shown in this document.
Individual Electrical Characteristics (Ta = 25°C)
Characteristic
Forward voltage
Reverse current
Capacitance
Collector−emitter
breakdown voltage
Emitter−collector
breakdown voltage
Collector−base breakdown voltage
Emitter−base breakdown voltage
collector dark current
Collector dark current
Collector dark current
DC forward current gain
Capacitance (collector to emitter)
Symbol
Test Condition
V_F
I_F = 10 mA
I_R
V_R = 5 V
C_T
V = 0, f = 1 MHz
V_(BR)CEO I_C = 0.5mA
V_(BR)ECO I_E = 0.1mA
V_(BR)CBO
V_(BR)EBO
I_CEO
I_C = 0.1mA
I_E = 0.1mA
V_CE = 48V
V_CE = 48V,Ta = 85°C
I_CER
V_CE = 48V,Ta = 85°C
R_BE = 1MΩ
I_CBO
h_FE
C_CE
V_CB = 10V
V_CE = 5V,I_C = 0.5mA
V = 0, f = 1MHz
Min. Typ. Max. Unit
1.0 1.15 1.3
V
―
―
10
μA
―
30
―
pF
80
―
―
V
7
―
―
V
80
―
―
V
7
―
―
V
―
10 100 nA
―
2
50
μA
―
0.5
10
μA
―
0.1
―
nA
― 400 ―
―
―
10
―
pF
Coupled Electrical Characteristics (Ta = 25°C)
Characteristic
Current transfer ratio
Saturated CTR
Base photo−current
Collector−emitter
saturation voltage
Off−state collector current
Symbol
Test Condition
I_C / I_F
I_F = 5 mA, V_CE = 5 V
Rank GB
I_C / I_{F (sat)}
I_F = 1 mA, V_CE = 0.4 V
Rank GB
I_PB
V_{CE (sat)}
I_F = 5mA,V_CB = 5V
I_C = 2.4 mA, I_F = 8 mA
I_C = 0.2 mA, I_F = 1 mA
Rank GB
I_{C (off)}
I_F = 0.7mA, V_CE = 48 V
Min. Typ. Max. Unit
50
―
600
%
100
―
600
―
60
―
%
30
―
―
―
10
―
μA
―
―
0.4
―
0.2
―
V
―
―
0.4
―
1
10
μA
3
2007-10-01