TLP1033A Datasheet, PDF (3/7 Pages) Toshiba Semiconductor – TOSHIBA Photointerrupter Infrared LED + Photo IC

Markings
TLP1033A
Monthly lot number
Month of manufacture (January to December denoted by letters A to L respectively)
Year of manufacture (Last digit of year of manufacture)
Precautions
· When removing flux with chemicals after soldering, clean only the soldered part of the leads. Do not immerse
the entire package in the cleaning solvent. Chemical residue on the LED emitter or the photodetector inside the
photo-IC case may adversely affect the optical characteristics of the device and may drastically reduce the
threshold input current.
· The case is made of polybutylene-terephthalate. Oil or chemicals may cause the package to melt or crack. Care
must be taken in relation to the environment in which the device is to be installed.
· Mount the device on a level surface.
· Output fluctuates for 100 ms after power-on while the internal circuit stabilizes.
· To stabilize the power line, insert a bypass capacitor of up to 0.01 mF between VCC and GND, close to the device.
· The threshold input current increases over time due to current flowing in the infrared LED. The design of
circuits which incorporate the device must take into account the change in threshold input current over time.
The change in threshold input current is equal to the reciprocal of the change in LED infrared optical output.
IFHL (t)
IFHL (0)
=
ççèæ
PO (t)
PO (0)
÷÷øö
-1
· Choose a high-quality shutter material which is impermeable to light. If the material is of inferior quality, light
from the LED may pass through the shutter, causing the device to malfunction.
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2002-09-20