TK5A45DA Datasheet, PDF (3/9 Pages) Toshiba Semiconductor – Switching Voltage Regulators

6. Electrical Characteristics
6.1. Static Characteristics (T_a = 25 unless otherwise specified)
Characteristics
Symbol
Test Condition
Min
Gate leakage current
I_GSS
V_GS = ±30 V, V_DS = 0 V

Drain cut-off current
I_DSS
V_DS = 450 V, V_GS = 0 V

Drain-source breakdown voltage
V_(BR)DSS I_D = 10 mA, V_GS = 0 V
450
Gate threshold voltage
V_th
V_DS = 10 V, I_D = 1 mA
2.4
Drain-source on-resistance
R_DS(ON) V_GS = 10 V, I_D = 2.3 A

Forward transfer admittance
|Y_fs| V_DS = 10 V, I_D = 2.3 A
0.4
6.2. Dynamic Characteristics (T_a = 25 unless otherwise specified)
Characteristics
Input capacitance
Reverse transfer capacitance
Output capacitance
Switching time (rise time)
Switching time (turn-on time)
Switching time (fall time)
Switching time (turn-off time)
Symbol
Test Condition
Min
C_iss
V_DS = 25 V, V_GS = 0 V, f = 1 MHz

C_rss

C_oss

t_r
See Figure 6.2.1.

t_on

t_f

t_off

TK5A45DA
Typ. Max Unit

±1
µA

10


V

4.4
1.52 1.75
Ω
1.5

S
Typ. Max Unit
380

pF
2.5

45

18

ns
40

7

55

Fig. 6.2.1 Switching Time Test Circuit
6.3. Gate Charge Characteristics (T_a = 25 unless otherwise specified)
Characteristics
Total gate charge (gate-source plus
gate-drain)
Gate-source charge
Gate-drain charge
Symbol
Test Condition
Min Typ. Max Unit
Q_g
V_DD ≈ 360 V, V_GS = 10 V, I_D = 4.5 A

9

nC
Q_gs

5

Q_gd

4

6.4. Source-Drain Characteristics (T_a = 25 unless otherwise specified)
Characteristics
Reverse drain current (DC)
Reverse drain current (pulsed)
Diode forward voltage
Reverse recovery time
Reverse recovery charge
(Note 1)
(Note 1)
Symbol
Test Condition
I_DR
I_DRP
V_DSF
t_rr
Q_rr


I_DR1 = 4.5 A, V_GS = 0 V
I_DR = 4.5 A, V_GS = 0 V
-dI_DR/dt = 100 A/µs
Min Typ. Max Unit


4.5
A


18


-1.7
V
 1000 
ns

5.5

nC
3
2011-02-14
Rev.2.0