TIM7785-8UL Datasheet, PDF (3/4 Pages) Toshiba Semiconductor – MICROWAVE POWER GaAs FET

RF PERFORMANCES
TIM7785-8UL
Output Power vs. Frequency
42
VDS= 10V
41
IDS≅ 2.2A
Pin= 31.0dBm
40
39
38
37
7.4
7.6
7.8
8
8.2
8.4
8.6
8.8
Frequency (GHz)
Output Power vs. Input Power
42
f= 8.1GHz
41
VDS= 10V
IDS≅ 2.2A
Po
40
39
38
37
ηadd
36
35
34
33
24
26
28
30
32
Pin (dBm)
90
80
70
60
50
40
30
20
10
0
34
3