TIM7785-8SL Datasheet, PDF (3/4 Pages) Toshiba Semiconductor – MICROWAVE POWER GaAs FET

TIM7785-8SL
RF PERFORMANCE
Output Power (Pout) vs. Frequency
VDS=10V
IDS≅2.2A
Pin=33.5dBm
40
39
38
37
7.7 7.9 8.1 8.3 8.5
Frequency (GHz)
Output Power(Pout) vs. Input Power(Pin)
42
freq.=8.5GHz
41 _VDS=10V
IDS≅2.2A
40
39
Pout
38
37
36
ηadd
35
34
33
27
29
31
33
35
Pin(dBm)
3
80
70
60
50
40
30
20
10
37