TIM7785-4UL Datasheet, PDF (3/4 Pages) Toshiba Semiconductor – MICROWAVE POWER GaAs FET

RF PERFORMANCES
TIM7785-4UL
Output Power vs. Frequency
39
VDS= 10V
38
IDS≅ 1.1A
Pin= 28.0dBm
37
36
35
34
7.4
7.6
7.8
8
8.2
8.4
8.6
8.8
Frequency (GHz)
Output Power vs. Input Power
40
f= 8.1GHz
39
VDS= 10V
IDS≅ 1.1A
38
Po
37
36
ηadd
35
34
33
32
31
22
24
26
28
30
Pin (dBm)
90
80
70
60
50
40
30
20
10
0
32
3