TIM1414-4-252 Datasheet, PDF (3/4 Pages) Toshiba Semiconductor – MICROWAVE POWER GaAs FET

RF PERFORMANCE
TIM1414-4-252
Output Power (Pout) vs. Frequency
VDS=9V
37 IDS≅1.7A
Pin=30.5 dBm
36
35
34
33
13.75
14.1
14.5
Frequency(GHz)
Output Power(Pout) vs. Input Power(Pin)
41
freq.=14.5GHz
40 _VDS=9V
IDS≅1.7A
39
38
37
Pout
36
35
34
ηadd
33
32
23
25
27
29
31
Pin(dBm)
3
40
30
20
10
0
33