TIM1011-10L Datasheet, PDF (3/4 Pages) Toshiba Semiconductor – MICROWAVE POWER GaAs FET

RF PERFORMANCE
TIM1011-10L
Output Power (Pout) vs. Frequency
VDS=9V
42 IDS≅4.0A
Pin=34.5 dBm
41
40
39
38
10.7
11.2
11.7
Frequency(GHz)
Output Power(Pout) vs. Input Power(Pin)
44
freq.=11.7GHz
43 _VDS=9V
IDS≅4.0A
42
41
Pout
40
39
38
37
ηadd
36
35
27
29
31
33
35
Pin(dBm)
3
50
40
30
20
10
37