TCS10NLU_14 Datasheet, PDF (3/6 Pages) Toshiba Semiconductor – TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic

TCS10NLU
DC Characteristics (Ta = 25°C)
Characteristics
Symbol
Condition
V_CC (V) Min
Output Voltage Low- Level V_OL
I_OL = 1.0 mA
2.3 to 3.6 ⎯
Output Leakage Current
I_OFF
V_OUT = 5.5V
0
⎯
Supply Current
Average
Current
I_CC
Current at pulse riving ^{2.3 to 2.7}
(Note 5, Fig. A)
3.0 to 3.6
⎯
⎯
Operating
Current
I_CC ON
Peak current
(Note 5, Fig. A)
2.3 to 3.6 ⎯
Operating Frequency
f_opr
(Fig. A)
2.3 to 3.6 ⎯
Note 5: I_CC is pulsed periodically.
Typ. Max Unit
⎯
V_CC
x 10%
V
0.5
1
μA
5.5 9.5
μA
8.7 13.2
0.7
1.3
mA
25
⎯
Hz
Magnetic Characteristics (Ta = 25°C)
Characteristics
Symbol
Condition
(Note 6, Fig. B)
V_CC (V) Min Typ. Max Unit
Magnetic
Flux
Density
Operating Point
Releasing Point
Hysteresis
B_ON
B_OFF
B_H
V_OUT = V_OL
V_OUT =Z
(Note 7)
|B_ON - B_OFF|
2.3 to 3.6 -2.5 -1.8 ⎯
2.3 to 3.6 ⎯
-0.8 -0.3
mT
2.3 to 3.6 ⎯
1.0
⎯
Note 6: Uniform magnetic field perpendicularly to the magnetic sensor.
Note 7: In the high-impedance state.
Note: Direction of the Magnetic field
Magnetic Field, B
(Fig. A): I_CC Characteristics
I_CC
Operating Current
(Typ. 0.7 mA）
1/fopr（fopr = 25 Hz）
Average Current
(Typ. 5.5 μA)
Time
(Fig. B): Operating Characteristics
V_OUT
High-impedance state
North-Pole
3
B_H
V_OL
B_ON B_OFF
0 South-Pole
Magnetic Flux Density
2014-03-01