TCD1304DG Datasheet, PDF (3/15 Pages) Toshiba Semiconductor – TOSHIBA CCD LINEAR IMAGE SENSOR CCD(Charge Coupled Device)

TCD1304DG
OPTICAL / ELECTRICAL CHARACTERISTICS
(Ta = 25°C, V_φ = 4.0V (PULSE), f _φ = 0.5MHz, t_INT (INTEGRATION TIME) = 10ms, LOAD
RESISTANCE = 100kΩ, V_AD = V_DD = 4.0V, LIGHT SOURCE = DAYLIGHT FLUORESCENT
LAMP)
CHARACTERISTIC
SYMBOL MIN TYP. MAX UNIT NOTE
Sensitivity
Photo Response Non Uniformity
Register Imbalance
Saturation Output Voltage
Dark Signal Voltage
Total Transfer Effeiciency
Dynamic Range
Saturation Exposure
DC Power Dissipation
DC Signal Output Voltage
Output Impedance
Image Lag of Electronic Shutter
R
PRNU
RI
V_SAT
V_MDK
TTE
DR
SE
PD
V_OS
Z_o
VLAGICG
110 160 ― V / lx·s
―
―
10
%
(Note 2)
―
―
3
%
(Note 3)
450 600
―
mV
V_OD = 3.0V
(Note 4)
―
2
5
mV
(Note 5)
92
95
―
%
― 300 ―
―
(Note 6)
― 0.004 ―
lx·s
(Note 7)
―
25
75 mW
1.5 2.5 3.5
V
(Note 8)
―
0.5 1.0
kΩ
―
―
10
mV Tint=100µs
Note 2: Measured at 50% of SE (Typ.)
Definition of PRNU: PRNU = ^∆χ ×100(%)
χ
Where χ is average of total signal outputs and ∆χ is the maximum deviation from χ under uniform
illumination.
Note 3: Measured at 50% of SE (Typ.)
RI is defined as follows:
3647
∑ χn − χn + 1
RI = ⁿ⁼¹
× 100(%)
3647·χ
Where χ n and χ n+1 are signal outputs of each pixel. χ is average of total signal outputs.
Note 4: V_SAT is defined as minimum saturation output voltage of all effective pixels.
Note 5: V_MDK is defined as maximum dark signal voltage of all effective pixels.
3
2004-01-06