TC7WG126FU Datasheet, PDF (3/9 Pages) Toshiba Semiconductor – CMOS Digital Integrated Circuit Silicon Monolithic Dual Bus Buffer with 3-STATE Output

TC7WG126FU/FK
Electrical Characteristics
DC Characteristics
Characteristics
Symbol
Test Condition
Ta = 25°C
Ta = −40~85°C
Unit
V_CC (V) Min Typ. Max Min Max
0.9
V_CC
⎯
⎯
V_CC
⎯
1.1~1.3
V_CC
× 0.7
⎯
⎯
V_CC
× 0.7
⎯
High level V_IH
⎯
1.4~1.6
V_CC
× 0.65
⎯
⎯
V_CC
× 0.65
⎯
1.65~ V_CC
1.95 × 0.65
⎯
⎯
V_CC
× 0.65
⎯
2.3~2.7 1.7
⎯
⎯
1.7
⎯
Input voltage
3.0~3.6 2.0
0.9
⎯
⎯
⎯
2.0
⎯
V
⎯ GND ⎯ GND
1.1~1.3 ⎯
⎯
V_CC
× 0.3
⎯
V_CC
× 0.3
Low level V_IL
⎯
1.4~1.6 ⎯
⎯
V_CC
× 0.35
⎯
V_CC
× 0.35
1.65~
1.95
⎯
⎯
V_CC
× 0.35
⎯
V_CC
× 0.35
2.3~2.7 ⎯
⎯
0.7
⎯
0.7
3.0~3.6 ⎯
⎯
0.8
⎯
0.8
I_OH =−0.02 mA 0.9
0.75 ⎯
I_OH = −0.3 mA
1.1~1.3
V_CC
× 0.75
⎯
⎯ 0.75 ⎯
⎯
V_CC
× 0.75
⎯
High level
V_OH
I_OH = −1.7 mA
V_IN =V_IH
1.4~1.6
V_CC
× 0.75
⎯
I_OH = −3.0 mA
1.65~
1.95
V_CC
-0.45
⎯
⎯
V_CC
× 0.75
⎯
⎯
V_CC
-0.45
⎯
Output voltage
I_OH = −4.0 mA
I_OH = −8.0 mA
I_OL = 0.02 mA
2.3~2.7
3.0~3.6
0.9
2.0
2.48
⎯
I_OL = 0.3 mA 1.1~1.3 ⎯
⎯
⎯
2.0
⎯
⎯
⎯ 2.48 ⎯
V
⎯
0.1
⎯
0.1
⎯
V_CC
× 0.25
⎯
V_CC
× 0.25
Low level
V_OL
V_IN= V_IL ^{IOL = 1.7 mA}
or ^VIH
1.4~1.6
⎯
I_OL = 3.0 mA
1.65~
1.95
⎯
⎯
V_CC
× 0.25
⎯
V_CC
× 0.25
⎯ 0.45 ⎯ 0.45
I_OL = 4.0 mA 2.3~2.7 ⎯
I_OL = 8.0 mA 3.0~3.6 ⎯
Input leakage current
I_IN V_IN = 0~5.5V
0~3.6
⎯
3-state output off-state current
I_OZ
V_IN = V_IH or V_IL
V_OUT = 0~3.6V
0.9~3.6 ⎯
Power off leakage current
I_OFF
V_{IN =} 5.5V
or V_OUT = 3.6V
0.0
⎯
Quiescent supply current
I_CC V_IN = V_CC or GND
3.6
⎯
⎯
0.4
⎯
0.4
⎯
0.4
⎯
0.4
⎯ ±0.1 ⎯ ±1.0 μA
⎯
1.0
⎯ 10.0 μA
⎯
1.0
⎯ 10.0 μA
⎯
1.0
⎯ 10.0 μA
3
2007-11-01