TC74HCT00AF_12 Datasheet, PDF (3/6 Pages) Toshiba Semiconductor – Quad 2-Input NAND Gate

TC74HCT00AP/AF
Electrical Characteristics
DC Characteristics
Characteristics
High-level input
voltage
Low-level input
voltage
High-level output
voltage
Low-level output
voltage
Input leakage
current
Quiescent supply
current
Symbol
V_IH
Test Condition
⎯
Ta = 25°C
Ta = −40~85°C
Unit
V_CC (V) Min Typ. Max Min Max
4.5~5.5 2.0
⎯
⎯
2.0
⎯
V
V_IL
V_OH
V_OL
I_IN
I_CC
I_C
⎯
4.5~5.5 ⎯
⎯
0.8
⎯
0.8
V
V_IN
I_OH = −20 μA
= V_IH or V_{IL IOH = −4 mA}
V_IN
I_OL = 20 μA
= V_IH or V_{IL IOL = 4 mA}
V_IN = V_CC or GND
4.5
4.4 4.5
⎯
4.4
⎯
V
4.5 4.18 4.31 ⎯ 4.13 ⎯
4.5
⎯
0.0 0.1
⎯
0.1
V
4.5
⎯ 0.17 0.26 ⎯ 0.33
5.5
⎯
⎯ ±0.1 ⎯ ±1.0 μA
V_IN = V_CC or GND
5.5
⎯
⎯
1.0
⎯ 10.0 μA
Per input: V_IN = 0.5 V or 2.4 V
5.5
⎯
⎯
2.0
⎯
2.9 mA
Other input: V_CC or GND
AC Characteristics (C_L = 15 pF, V_CC = 5 V, Ta = 25°C, input: t_r = t_f = 6 ns)
Characteristics
Symbol
Test Condition
Min Typ. Max Unit
Output transition time
Propagation delay time
t_TLH
t_THL
t_pLH
t_pHL
⎯
⎯
4
8
ns
⎯
⎯
10
20
ns
AC Characteristics (C_L = 50 pF, input: t_r = t_f = 6 ns)
Characteristics
Symbol
Output transition time
Propagation delay
time
Input capacitance
Power dissipation
capacitance
t_TLH
t_THL
t_pLH
t_pHL
C_IN
C_PD
(Note)
Test Condition
Ta = 25°C
Ta = −40~85°C
Unit
V_CC (V) Min Typ. Max Min Max
4.5
⎯
8
15
⎯
19
⎯
ns
5.5
⎯
7
14
⎯
18
4.5
⎯
13
19
⎯
24
⎯
ns
5.5
⎯
12
17
⎯
21
⎯
⎯
5
10
⎯
10
pF
⎯
⎯
19
⎯
⎯
⎯
pF
Note:
C_PD is defined as the value of the internal equivalent capacitance which is calculated from the operating
current consumption without load.
Average operating current can be obtained by the equation:
I_CC (opr) = C_PDï½¥V_CCï½¥f_IN + I_CC/4 (per gate)
3
2012-02-29