TC74HC4072AP_07 Datasheet, PDF (3/7 Pages) Toshiba Semiconductor – CMOS Digital Integrated Circuit Silicon Monolithic Dual 4-Input OR Gate

Electrical Characteristics
DC Characteristics
Characteristics
Symbol
Test Condition
High-level input
voltage
V_IH
⎯
Low-level input
voltage
V_IL
⎯
High-level output
voltage
Low-level output
voltage
Input leakage
current
Quiescent supply
current
V_OH
V_IN
= V_IH or
V_IL
I_OH = −20 μA
I_OH = −4 mA
I_OH = −5.2 mA
I_OL = 20 μA
V_OL
V_IN
= V_IL
I_OL = 4 mA
I_OL = 5.2 mA
I_IN
V_IN = V_CC or GND
I_CC
V_IN = V_CC or GND
TC74HC4072AP/AF
Ta = 25°C
Ta = −40 to
85°C
Unit
V_CC
(V)
Min
Typ.
Max
Min
Max
2.0 1.50 ⎯
⎯ 1.50 ⎯
4.5 3.15 ⎯
⎯ 3.15 ⎯
V
6.0 4.20 ⎯
⎯ 4.20 ⎯
2.0 ⎯
⎯ 0.50 ⎯ 0.50
4.5 ⎯
⎯
1.35 ⎯
1.35
V
6.0 ⎯
⎯ 1.80 ⎯ 1.80
2.0 1.9 2.0
⎯
1.9
⎯
4.5 4.4 4.5
⎯
4.4
⎯
6.0 5.9 6.0
⎯
5.9
⎯
V
4.5 4.18 4.31 ⎯ 4.13 ⎯
6.0 5.68 5.80 ⎯ 5.63 ⎯
2.0 ⎯
0.0 0.1
⎯
0.1
4.5 ⎯
0.0 0.1
⎯
0.1
6.0 ⎯
0.0 0.1
⎯
0.1
V
4.5 ⎯ 0.17 0.26 ⎯ 0.33
6.0 ⎯ 0.18 0.26 ⎯ 0.33
6.0 ⎯
⎯ ±0.1 ⎯ ±1.0 μA
6.0 ⎯
⎯
1.0
⎯ 10.0 μA
AC Characteristics (C_L = 15 pF, V_CC = 5 V, Ta = 25°C, input: t_r = t_f = 6 ns)
Characteristics
Output transition time
Propagation delay time
Symbol
t_TLH
t_THL
t_pLH
t_pHL
Test Condition
⎯
⎯
Min Typ. Max Unit
⎯
4
8
ns
⎯
9
16
ns
3
2007-10-01