TC74HC133AP_07 Datasheet, PDF (3/7 Pages) Toshiba Semiconductor – 13-Input NAND Gate

TC74HC133AP/AF
Electrical Characteristics
DC Characteristics
Characteristics
Symbol
High-level input
voltage
V_IH
Test Condition
Ta = 25°C
Ta =
−40 to 85°C _Unit
V_CC (V) Min Typ. Max Min Max
2.0 1.50 ⎯
⎯ 1.50 ⎯
⎯
4.5 3.15 ⎯
⎯ 3.15 ⎯
V
6.0 4.20 ⎯
⎯ 4.20 ⎯
Low-level input
voltage
V_IL
2.0
⎯
⎯ 0.50 ⎯ 0.50
⎯
4.5
⎯
⎯
1.35 ⎯
1.35
V
6.0
⎯
⎯ 1.80 ⎯ 1.80
2.0
1.9 2.0
⎯
1.9
⎯
High-level output
voltage
Low-level output
voltage
Input leakage
current
V_OH
V_OL
I_IN
V_IN
= V_IH or V_IL
I_OH = −20 μA
I_OH = −4 mA
I_OH = −5.2 mA
V_IN
= V_IH or V_IL
I_OL = 20 μA
I_OL = 4 mA
I_OL = 5.2 mA
V_IN = V_CC or GND
4.5
4.4 4.5
⎯
4.4
⎯
6.0
5.9 6.0
⎯
5.9
⎯
V
4.5 4.18 4.31 ⎯ 4.13 ⎯
6.0 5.68 5.80 ⎯ 5.63 ⎯
2.0
⎯
0.0 0.1
⎯
0.1
4.5
⎯
0.0 0.1
⎯
0.1
6.0
⎯
0.0 0.1
⎯
0.1
V
4.5
⎯ 0.17 0.26 ⎯ 0.33
6.0
⎯ 0.18 0.26 ⎯ 0.33
6.0
⎯
⎯ ±0.1 ⎯ ±1.0 μA
Quiescent supply
current
I_CC
V_IN = V_CC or GND
6.0
⎯
⎯
1.0
⎯ 10.0 μA
AC Characteristics (C_L = 15 pF, V_CC = 5 V, Ta = 25°C, input: t_r = t_f = 6 ns)
Characteristics
Symbol
Test Condition
Min Typ. Max Unit
Output transition time
Propagation delay time
t_TLH
t_THL
t_pLH
t_pHL
⎯
⎯
4
8
ns
⎯
⎯
13
22
ns
3
2007-10-01