SSM6L11TU Datasheet, PDF (3/9 Pages) Toshiba Semiconductor – High Speed Switching Applications

SSM6L11TU
Q2 Electrical Characteristics (Ta = 25°C)
Characteristics
Gate leakage current
Drain-Source breakdown voltage
Drain cut-off current
Gate threshold voltage
Forward transfer admittance
Drain-Source on-resistance
Input capacitance
Reverse transfer capacitance
Output capacitance
Switching time
Turn-on time
Turn-off time
Note3: Pulse test
Symbol
Test Condition
Min Typ. Max Unit
I_GSS
V_GS = ± 12V, V_DS = 0
⎯
⎯
±1
μA
V _{(BR) DSS}
V _{(BR) DSX}
I_D = -1 mA, V_GS = 0
I_D = -1 mA, V_GS = +12 V
-20
⎯
⎯
V
-8
⎯
⎯
I_DSS
V_DS = -20 V, V_GS = 0
⎯
⎯
-1
μA
V_th
V_DS = -3 V, I_D = -0.1 mA
-0.5
⎯
-1.1
V
⏐Y_fs⏐
V_DS = -3 V, I_D = -0.25 A
(Note3) 0.65 1.3
⎯
S
R_{DS (ON)}
I_D = -0.25 A, V_GS = -4 V
I_D = -0.25 A, V_GS = -2.5 V
(Note3) ⎯
(Note3) ⎯
210 260
mΩ
310 430
C_iss
V_DS = -10 V, V_GS = 0, f = 1 MHz
⎯ 218 ⎯
pF
C_rss
V_DS = -10 V, V_GS = 0, f = 1 MHz
⎯
42
⎯
pF
C_oss
V_DS = -10 V, V_GS = 0, f = 1 MHz
⎯
52
⎯
pF
t_on
V_DD = -10 V, I_D = -0.25 A,
t_off
V_GS = 0~-2.5 V, R_G = 4.7 Ω
⎯
16
⎯
ns
⎯
15
⎯
Switching Time Test Circuit
(a) Test circuit
0
IN
−2.5V
10 μs
V_DD = -10 V
R_G = 4.7 Ω
D.U. ^<= 1%
V_IN: t_r, t_f < 5 ns
Common Source
Ta = 25°C
OUT
R_L
V_DD
(b) V_IN
0V
(c) V_OUT
−2.5 V
V_{DS (ON)}
V_DD
10%
90%
90%
10%
t_r
t_f
t_on
t_off
Precaution
V_th can be expressed as the voltage between gate and source when the low operating current value is I_D=-100 μA for
this product. For normal switching operation, V_{GS (on)} requires a higher voltage than V_th and V_{GS (off)} requires a lower
voltage than V_th.
(The relationship can be established as follows: V_{GS (off)} < V_th < V_{GS (on)})
Please take this into consideration when using the device.
.
3
2007-11-01