SSM5N16FE Datasheet, PDF (3/5 Pages) Toshiba Semiconductor – High Speed Switching Applications

(Q1, Q2 common)
250
200
10
150
2.5
4 3 _2.3
I_D – V_DS
2.1
Common source
Ta = 25°C
1.9
1.7
100
1.5
50
VGS = 1.3 V
0
0
0.5
1
1.5
2
Drain-Source voltage VDS (V)
SSM5N16FE
1000
100
Common source
VDS = 3 V
I_D – V_GS
Ta = 100°C
10
25°C
1
−25°C
0.1
0.01
0
1
2
3
Gate-Source voltage VGS (V)
R_{DS (ON)} – I_D
12
Common source
Ta = 25°C
10
8
VGS = 1.5 V
6
4
2.5 V
2
4V
0
1
10
100
1000
Drain current ID (mA)
R_{DS (ON)} – V_GS
6
Common source
ID = 10 mA
5
4
3
Ta = 100°C
2
25°C
1
−25°C
0
0
2
4
6
8
10
Gate-Source voltage VGS (V)
R_{DS (ON)} – Ta
8
Common source
6
VGS = 1.5 V, ID = 1 mA
4
2.5 V, 10 mA
2
4 V, 10 mA
0
−25
0
25
50
75 100 125 150
Ambient temperature Ta (°C)
V_th – Ta
2
Common source
ID = 0.1 mA
VDS = 3 V
1.6
1.2
0.8
0.4
0
−25
0
25
50
75 100 125 150
Ambient temperature Ta (°C)
3
2007-11-01