SSM3J16FS Datasheet, PDF (3/5 Pages) Toshiba Semiconductor – Field Effect Transistor Silicon P Channel MOS Type High Speed Switching Applications Analog Switch Applications

-250
-200
-150
-100
-50
0
0
I_D – V_DS
Common Source
Ta = 25°C
-10
-4
-3
-2.7
-2.5
-2.3
-2.1
-1.9
-1.7
VGS = -1.5 V
-0.5
-1
-1.5
-2
Drain - Source voltage V_DS (V)
SSM3J16FS
-1000
Common Source
VDS = -3 V
-100
I_D – V_GS
Ta = 100°C
-10
25°C
-1
−25°C
-0.1
-0.01
0
-1
-2
-3
-4
Gate - Source voltage V_GS (V)
R_{DS (ON)} – I_D
25
VGS = -1.5 V
20
15
10
-2.5 V
5
-4 V
0
-1
-10
-100
-1000
Drain current I_D (mA)
20
1.8
1.6
1.4
1.2
10
8
6
.4
2
00
R_{DS (ON)} – V_GS
Common Source
ID = -1 mA
Ta=100℃
25℃
-25℃
-2
-4
-6
-8
-10
Gate - Source voltage V_GS (V)
R_{DS (ON)} – Ta
40
Common Source
35
30
25
20
VGS =−1.5 V, ID=-1mA
15
-2.5 V, -10mA
10
5
-4V, -10mA
0
−25
0
25
50
75 100 125 150
Ambient temperature Ta (°C)
-2
Common Source
-1.8 ID = -0.1 mA
VDS = -3 V
-1.6
V_th – Ta
-1.4
-1.2
-1
-0.8
-0.6
-0.4
-0.2
0
−25
0
25
50
75 100 125 150
Ambient temperature Ta (°C)
3
2007-11-01