SSM3J135TU Datasheet, PDF (3/6 Pages) Toshiba Semiconductor – TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type (U-MOSⅥ)

-6
-5
-4
I
-3
-2
-1
0
0
I_D – V_DS
-4.5 V
-2.5 V
-1.8 V
VGS = -1.5 V
Common Source
Ta = 25 °C
Pulse test
-0.2
-0.4
-0.6
-0.8
-1
Drain–source voltage V_DS (V)
SSM3J135TU
-10 _{Common Source}
VDS = -3 V
Pulse test
-1
I_D – V_GS
-0.1
Ta = 100 °C
-0.01
25 °C
-0.001
-25 °C
-0.0001
0
-1.0
-2.0
Gate–source voltage V_GS (V)
R_{DS (ON)} – V_GS
400
ID = -1.0A
Common Source
Pulse test
300
200
100
0
0
25 °C
Ta = 100 °C
-25 °C
-2
-4
-6
-8
Gate–source voltage V_GS (V)
400
Common Source
Ta = 25°C
Pulse test
R_{DS (ON)} – I_D
300
-1.5 V
200
100
0
0
-1.8V
-2.5 V
VGS = -4.5 V
-2.0
-4.0
-6.0
Drain current I_D (A)
400
Common Source
Pulse test
R_{DS (ON)} – Ta
300
200
-0.2 A / -1.5 V
-0.4 A / -1.8 V
-0.6 A / -2.5 V
100
ID = -1.0 A / VGS = -4.5 V
0
−50
0
50
100
150
Ambient temperature Ta (°C)
V_th – Ta
-1.0
Common Source
VDS = -3 V
ID = -1 mA
-0.5
0
−50
0
50
100
150
Ambient temperature Ta (°C)
3
2010-11-24