SSM3J130TU Datasheet, PDF (3/6 Pages) Toshiba Semiconductor – Field-Effect Transistor Silicon P-Channel MOS Type (U-MOSⅥ)

-10
-8V
-8.0
-6.0
I_D – V_DS
-1.8 V
-1.5 V
-4.5V
-2.5V
VGS = -1.2 V
-4.0
-2.0
0
0
Common Source
Ta = 25 °C
-0.2
-0.4
-0.6
-0.8
-1
Drain–source voltage V_DS (V)
SSM3J130TU
-10 _{Common Source}
VDS = -3 V
-1
I_D – V_GS
-0.1
-0.01
Ta = 100 °C
25 °C
-25 °C
-0.001
-0.0001
0
-0.5
-1.0
-1.5
Gate–source voltage V_GS (V)
R_{DS (ON)} – V_GS
100
ID =-4.0A
Common Source
Ta = 25°C
50
25 °C
Ta = 100 °C
-25 °C
0
0
-2
-4
-6
-8
Gate–source voltage V_GS (V)
R_{DS (ON)} – I_D
100
Common Source
Ta = 25°C
50
-1.5 V
-2.5 V
-1.8V
VGS = -4.5 V
0
0
-2.0
-4.0
-6.0
-8.0
-10
Drain current I_D (A)
R_{DS (ON)} – Ta
100
Common Source
V_th – Ta
-1.0
Common Source
VDS = -3 V
ID = -1 mA
50
-2.5 A / -1.8V _{-1.5 A / -1.5 V}
-4.0 A / -2.5 V
ID = -4.0 A / VGS = -4.5 V
0
−50
0
50
100
150
Ambient temperature Ta (°C)
-0.5
0
−50
0
50
100
150
Ambient temperature Ta (°C)
3
2009-05-11