RN4992AFS Datasheet, PDF (3/6 Pages) Toshiba Semiconductor – Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications

Electrical Characteristics (Ta = 25°C) (Q1)
Characteristic
Collector cutoff current
Emitter cutoff current
DC current gain
Collector-emitter saturation voltage
Collector output capacitance
Symbol
Test Condition
I_CBO
I_EBO
h_FE
V_{CE (sat)}
C_ob
V_CB = 50 V, I_E = 0
V_EB = 5 V, I_C = 0
V_CE = 5 V, I_C = 1 mA
I_C = 5 mA, I_B = 0.25 mA
V_CB = 10 V, I_E = 0, f = 1 MHz
Electrical Characteristics (Ta = 25°C) (Q2)
Characteristic
Collector cutoff current
Emitter cutoff current
DC current gain
Collector-emitter saturation voltage
Collector output capacitance
Symbol
Test Condition
I_CBO
I_EBO
h_FE
V_{CE (sat)}
C_ob
V_CB = −50 V, I_E = 0
V_EB = −5 V, I_C = 0
V_CE = −5 V, I_C =− 1 mA
I_C = −5 mA, I_B = −0.25 mA
V_CB = −10 V, I_E = 0, f = 1 MHz
Electrical Characteristics (Ta = 25°C) (Q1, Q2 common)
Characteristic
Input resistor
Symbol
R1
Test Condition
⎯
RN4992AFS
Min Typ. Max Unit
⎯
⎯
100
nA
⎯
⎯
100
nA
120
⎯
700
⎯
⎯
0.15
V
⎯
0.7
⎯
pF
Min Typ. Max Unit
⎯
⎯ −100 nA
⎯
⎯ −100 nA
120
⎯
400
⎯
⎯ −0.15 V
⎯
0.9
⎯
pF
Min Typ. Max Unit
17.6 22 26.4 kΩ
3
2007-11-01