RN4982 Datasheet, PDF (3/6 Pages) Toshiba Semiconductor – Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications

Q1 Electrical Characteristics (Ta = 25°C)
Characteristic
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Input voltage (ON)
Input voltage (OFF)
Transition frequency
Collector output capacitance
Symbol
I_CBO
I_CEO
I_EBO
h_FE
V_{CE (sat)}
V_{I (ON)}
V_{I (OFF)}
f_T
C_ob
Test
Circuit
Test Condition
― V_CB = 50V, I_E = 0
― V_CE = 50V, I_B = 0
― V_EB = 10V, I_C = 0
― V_CE = 5V, I_C = 10mA
― I_C = 5mA, I_B = 0.25mA
― V_CE = 0.2V, I_C = 5mA
― V_CE = 5V, I_C = 0.1mA
― V_CE = 10V, I_C = 5mA
― V_CB = 10V, I_E = 0, f = 1 MHz
RN4982
Min Typ. Max Unit
―
―
100
nA
―
―
500
0.38 ― 0.71 mA
50
―
―
―
―
0.1 0.3
V
1.2
―
2.4
V
1.0
―
1.5
V
―
250
― MHz
―
3
6
pF
Q2 Electrical Characteristics (Ta = 25°C)
Characteristic
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Input voltage (ON)
Input voltage (OFF)
Transition frequency
Collector output capacitance
Symbol
I_CBO
I_CEO
I_EBO
h_FE
V_{CE (sat)}
V_{I (ON)}
V_{I (OFF)}
f_T
C_ob
Test
Circuit
Test Condition
― V_CB = −50V, I_E = 0
― V_CE = −50V, I_B = 0
― V_EB = −10V, I_C = 0
― V_CE = −5V, I_C = −10mA
― I_C = −5mA, I_B = −0.25mA
― V_CE = −0.2V, I_C = −5mA
― V_CE = −5V, I_C = −0.1mA
― V_CE = −10V, I_C = −5mA
― V_CB = −10V, I_E = 0, f = 1MHz
Min Typ. Max Unit
―
― −100
nA
―
― −500
−0.38 ― −0.71 mA
50
―
―
―
―
−0.1 −0.3
V
−1.2
― −2.4
V
−1.0
― −1.5
V
―
200
― MHz
―
3
6
pF
Q1, Q2 Common Electrical Characteristics (Ta = 25°C)
Characteristic
Input resistor
Resistor ratio
Symbol
R1
R1/R2
Test
Circuit
―
―
Test Condition
―
―
Min Typ. Max Unit
7
10
13
kΩ
0.9
1.0 1.1
―
3
2001-06-07