RN4909 Datasheet, PDF (3/5 Pages) Toshiba Semiconductor – Silicon PNP Epitaxial Type (PCT Process) Silicon NPN Epitaxial Type (PCT Process)

Q1 Electrical Characteristics (Ta = 25°C)
Characteristic
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Input voltage (ON)
Input voltage (OFF)
Transition frequency
Collector output capacitance
Symbol
I_CBO
I_CEO
I_EBO
h_FE
V_{CE (sat)}
V_{I (ON)}
V_{I (OFF)}
f_T
C_ob
Test
Circuit
Test Condition
― V_CB = −50V, I_E = 0
― V_CE = −50V, I_B = 0
― V_EB = −15V, I_C = 0
― V_CE = −5V, I_C = −10mA
― I_C = −5mA, I_B = −0.25mA
― V_CE = −0.2V, I_C = −5mA
― V_CE = −5V, I_C = −0.1mA
― V_CE = −10V, I_C = −5mA
― V_CB = −10V, I_E = 0
RN4909
Min Typ. Max Unit
―
―
−0.167
70
―
−2.2
−1.5
―
―
―
―
―
―
−0.1
―
―
200
3
−100
−500
−0.311
―
−0.3
−5.8
−2.6
―
6
nA
mA
―
V
V
V
MHz
pF
Q2 Electrical Characteristics (Ta = 25°C)
Characteristic
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Input voltage (ON)
Input voltage (OFF)
Transition frequency
Collector output capacitance
Symbol
I_CBO
I_CEO
I_EBO
h_FE
V_{CE (sat)}
V_{I (ON)}
V_{I (OFF)}
f_T
C_ob
Test
Circuit
Test Condition
― V_CB = 50V, I_E = 0
― V_CE = 50V, I_B = 0
― V_EB = 15V, I_C = 0
― V_CE = 5V, I_C = 10mA
― I_C = 5mA, I_B = 0.25mA
― V_CE = 0.2V, I_C = 5mA
― V_CE = 5V, I_C = 0.1mA
― V_CE = 10V, I_C = 5mA
― V_CB = 10V, I_E = 0, f = 1 MHz
Min Typ. Max Unit
―
―
100
nA
―
―
500
0.167 ― 0.311 mA
70
―
―
―
―
0.1 0.3
V
2.2
―
5.8
V
1.5
―
2.6
V
―
250
― MHz
―
3
6
pF
Q1, Q2 Common Electrical Characteristics (Ta = 25°C)
Characteristic
Input resistor
Resistor ratio
Symbol
R1
R1/R2
Test
Circuit
―
―
Test Condition
―
―
Min Typ. Max Unit
32.9 47 61.1 kΩ
1.92 2.14 2.35 ―
3
2001-06-07