RN4908FE Datasheet, PDF (3/6 Pages) Toshiba Semiconductor – Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications

Electrical Characteristics (Ta = 25°C) (Q1)
Characteristics
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Input voltage (ON)
Input voltage (OFF)
Transition frequency
Collector output capacitance
Symbol
Test Condition
I_CBO
I_CEO
I_EBO
h_FE
V_{CE (sat)}
V_{I (ON)}
V_{I (OFF)}
f_T
C_ob
V_CB = −50 V, I_E = 0
V_CE = −50 V, I_B = 0
V_EB = −7 V, I_C = 0
V_CE = −5 V, I_C = −10 mA
I_C = −5 mA, I_B = −0.25 mA
V_CE = −0.2 V, I_C = −5 mA
V_CE = −5 V, I_C = −0.1 mA
V_CE = −10 V, I_C = −5 mA
V_CB = −10 V, I_E = 0, f = 1 MHz
Electrical Characteristics (Ta = 25°C) (Q2)
Characteristics
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Input voltage (ON)
Input voltage (OFF)
Transition frequency
Collector output capacitance
Symbol
Test Condition
I_CBO
I_CEO
I_EBO
h_FE
V_{CE (sat)}
V_{I (ON)}
V_{I (OFF)}
f_T
C_ob
V_CB = 50 V, I_E = 0
V_CE = 50 V, I_B = 0
V_EB = 7 V, I_C = 0
V_CE = 5 V, I_C = 10 mA
I_C = 5 mA, I_B = 0.25 mA
V_CE = 0.2 V, I_C = 5 mA
V_CE = 5 V, I_C = 0.1 mA
V_CE = 10 V, I_C = 5 mA
V_CB = 10 V, I_E = 0, f = 1 MHz
Electrical Characteristics (Ta = 25°C) (Q1, Q2 common)
Characteristics
Input resistor
Resistor ratio
Symbol
R1
R1/R2
Test Condition
⎯
⎯
RN4908FE
Min Typ. Max Unit
⎯
⎯ −100
nA
⎯
⎯ −500
−0.078 ⎯ −0.145 mA
80
⎯
⎯
⎯
−0.1 −0.3
V
−1.0 ⎯
−2.6
V
−0.6 ⎯ −1.16 V
⎯
200
⎯ MHz
⎯
3
6
pF
Min Typ. Max Unit
⎯
⎯
100
nA
⎯
⎯
500
0.078 ⎯ 0.145 mA
80
⎯
⎯
⎯
0.1 0.3
V
1.0
⎯
2.6
V
0.6
⎯ 1.16
V
⎯
250
⎯ MHz
⎯
3
6
pF
Min Typ. Max Unit
15.4 22 28.6 kΩ
0.421 0.468 0.515
3
2007-11-01