RN47A2 Datasheet, PDF (3/4 Pages) Toshiba Semiconductor – SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATIONS

Electrical Characteristics (Ta = 25°C) (Q1)
Characteristics
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Input voltage (ON)
Input voltage (OFF)
Transition frequency
Collector output capacitance
Input resistor
Resistor ratio
Symbol
I_CBO
I_CEO
I_EBO
h_FE
V_{CE (sat)}
V_{I (ON)}
V_{I (OFF)}
f_T
C_ob
R1
R1/R2
Test Condition
V_CB = 50 V, I_E = 0
V_CE = 50 V, I_B = 0
V_EB = 10 V, I_C = 0
V_CE = 5 V, I_C = 10 mA
I_C = 5 mA, I_B = 0.25 mA
V_CE = 0.2 V, I_C = 5 mA
V_CE = 5 V, I_C = 0.1 mA
V_CE = 10 V, I_C = 5 mA
V_CB = 10 V, I_E = 0, f = 1 MHz
¾
¾
Electrical Characteristics (Ta = 25°C) (Q2)
Characteristics
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Input voltage (ON)
Input voltage (OFF)
Transition frequency
Collector output capacitance
Input resistor
Resistor ratio
Symbol
I_CBO
I_CEO
I_EBO
h_FE
V_{CE (sat)}
V_{I (ON)}
V_{I (OFF)}
f_T
C_ob
R1
R1/R2
Test Condition
V_CB = -50 V, I_E = 0
V_CE = -50 V, I_B = 0
V_EB = -10 V, I_C = 0
V_CE = -5 V, I_C = -10 mA
I_C = -5 mA, I_B = -0.25 mA
V_CE = -0.2 V, I_C = -5 mA
V_CE = -5 V, I_C = -0.1 mA
V_CE = -10 V, I_C = -5 mA
V_CB = -10 V, I_E = 0, f = 1 MHz
¾
¾
RN47A2
Min Typ. Max Unit
¾
¾
100
nA
¾
¾
500
0.17 ¾ 0.33 mA
70
¾
¾
¾
0.1
0.3
V
1.3
¾
3.0
V
1.0
¾
1.5
V
¾
250
¾ MHz
¾
3
6
pF
15.4 22 28.6 kW
0.8
1.0
1.2
Min Typ. Max Unit
¾
¾ -100
nA
¾
¾ -500
-0.17 ¾ -0.33 mA
70
¾
¾
¾
-0.1 -0.3
V
-1.3
¾
-3.0
V
-1.0
¾
-1.5
V
¾
200
¾ MHz
¾
3
6
pF
15.4 22 28.6 kW
0.8
1.0
1.2
3
2002-01-29