RN2119MFV Datasheet, PDF (3/5 Pages) Toshiba Semiconductor – TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)

RN2119MFV
IC - VI(ON)
-100
COMMON EMITTER
VCE = -0.2V
-10
-25
Ta = 100°C
25
-1
-10000
IC - VI(OFF)
COMMON EMITTER
VCE = -5V
-1000 Ta = 100°C
-25
25
-100
-0.1
-0.1
-1
-10
INPUT VOLTAGE　VI(ON) ( V)
1000
hFE - IC
Ta = 100°C
25
100
-25
10
COMMON EMITTER
VCE = -5V
1
-0.1
-1
-10
COLLECTOR CURRENT　　IC (mA)
-100
-10
0-0
-0.2 -0.4 -0.6 -0.8 -1 -1.2 -1.4
INPUT VOLTAGE　VI(OFF) ( V)
VCE(sat) - IC
-1
COMMON EMITTER
IC/IB = 10
-0.1
Ta = 100°C
25
-25
-0.01
-0.1
-1
-10
COLLECTOR CURRENT　　IC (mA)
-100
3
2009-04-17