MG300Q2YS65H Datasheet, PDF (3/6 Pages) Toshiba Semiconductor – TOSHIBA IGBT Module Silicon N Channel IGBT

I_C – V_CE
600
20 V
15 V
18 V
12 V
450
10 V
300
PC = 2700 W
150
0
0
VGE = 8 V
Common emitter
Tc = 25°C
2
4
6
8
10
Collector-emitter voltage V_CE (V)
MG300Q2YS65H
I_C – V_CE
600
20 V
12 V
18 V
450
10 V
15 V
300
150
0
0
VGE = 8 V
Common emitter
Tc = 125°C
2
4
6
8
10
Collector-emitter voltage V_CE (V)
V_CE – V_GE
16
Common emitter
Tc = 25°C
12
8
IC = 600 A
4
300 A
150 A
0
0
4
8
12
16
20
Gate-emitter voltage V_GE (V)
V_CE – V_GE
16
Common emitter
Tc = 125°C
12
8
IC = 600 A
4
300 A
150 A
0
0
4
8
12
16
20
Gate-emitter voltage V_GE (V)
I_C – V_GE
600 _{Common emitter}
VCE = 5 V
450
300
150
0
0
Tc = 125°C
25°C
-40°C
4
8
12
16
Gate-emitter voltage V_GE (V)
600
Common cathode
VGE = 0
500
I_F – V_F
400
300
Tc = 125°C
200
25°C
100
0
0
1
2
3
4
Forward voltage V_F (V)
3
2003-03-11