GT30J324_06 Datasheet, PDF (3/7 Pages) Toshiba Semiconductor – Silicon N Channel IGBT High Power Switching Applications

I_C – V_CE
60
Common emitter
10
50 Tc = 25°C
20 ₁₅
40
9
30
20
VGE = 8 V
10
0
0
1
2
3
4
5
Collector-emitter voltage V_CE (V)
GT30J324
V_CE – V_GE
20
Common emitter
Tc = −40°C
16
12
8
60
30
4
IC = 10 A
0
0
4
8
12
16
20
Gate-emitter voltage V_GE (V)
V_CE – V_GE
20
Common emitter
Tc = 25°C
16
12
8
30
60
4
IC = 10 A
0
0
4
8
12
16
20
Gate-emitter voltage V_GE (V)
V_CE – V_GE
20
Common emitter
Tc = 125°C
16
12
8
30
60
4
IC = 10 A
0
0
4
8
12
16
20
Gate-emitter voltage V_GE (V)
60
Common emitter
50 V_CE = 5 V
I_C – V_GE
40
30
20
10
25
Tc = 125°C
−40
0
0
4
8
12
16
20
Gate-emitter voltage V_GE (V)
V_{CE (sat)} – Tc
4
Common emitter
VGE = 15 V
3
60
2
30
IC = 10 A
1
0
−60
−20
20
60
100
140
Case temperature Tc (°C)
3
2006-11-01