DF2B18FU Datasheet, PDF(3/9 Page) Toshiba Semiconductor – ESD Protection Diodes Silicon Epitaxial Planar

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DF2B18FU Datasheet, PDF (3/9 Pages) Toshiba Semiconductor – ESD Protection Diodes Silicon Epitaxial Planar

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5. Electrical Characteristics (Unless otherwise specified, Ta = 25î)

VRWM: Working peak reverse

voltage

VBR: Reverse breakdown voltage

IBR: Reverse breakdown current

IR: Reverse current

VC: Clamp voltage

IPP: Peak pulse current

RDYN: Dynamic resistance

DF2B18FU

Fig. 5.1 Definitions of Electrical Characteristics

Characteristics

Symbol

Note

Test Condition

Min Typ. Max Unit

Reverse breakdown voltage

VBR

IBR = 1 mA

16.2

î¥

20.5

Reverse current

VRWM = 12 V

î¥

0.1

ÂµA

Clamp voltage

VC (Note 1), (Note 3) IPP = 1 A

î¥

IPP = 2.5 A

î¥

Dynamic resistance

RDYN

(Note 2)

î¥

0.8

î¥

â¦

Total capacitance

VR = 0 V, f = 1 MHz

î¥

Note 1: Based on IEC61000-4-5 8/20 Âµs pulse.

Note 2: TLP parameter: Z0 = 50 â¦, tp = 100 ns, tr = 300 ps, averaging window: t1 = 30 ns to t2 = 60 ns,

extraction of dynamic resistance using a least-squares fit of TLP characteristics at IPP between 8 A to 16 A.

Note 3: Guaranteed by design.

2015-05-13

Rev.1.0

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