CRS20I40B Datasheet, PDF (3/7 Pages) Toshiba Semiconductor – Schottky Barrier Diode

CRS20I40B
8. Usage Considerations
(1) Schottky barrier diodes (SBDs) have reverse current greater than other types of diodes. This makes
SBDs more vulnerable to damage due to thermal runaway under high-temperature and high-voltage
conditions. Thus, both forward and reverse power losses of SBDs should be considered for thermal and
safety design.
(2) The absolute maximum ratings are rated values that must not be exceeded during operation, even for an
instant. The following are the recommended general derating methods for designing a circuit board using
this device.
V_RRM:Use this rating with reference to (1) above. V_RRM has a temperature
coefficient of 0.1 %/ at low temperatures. Take this coefficient into account when designing a
circuit board that will be operated in a low-temperature environment.
I_F(AV):We recommend that the worst-case current be no greater than 80 % of the absolute maximum
rating of I_F(AV) and that the worst-case junction temperature, T_j, be kept below 120 . When using
this device,
allow margins, referring to the T_a(max)-I_F(AV) curve.
I_FSM:This rating specifies peak non-repetitive forward surge current. This only applies to an abnormal
operation, which seldom occurs during the lifespan of a device.
T_j: Derate device parameters in proportion to this rating in order to ensure high reliability.
We recommend that the junction temperature (T_j) of a device be kept below 120 .
(3) Thermal resistance (junction-to-ambient) varies with the mounting conditions of a device on a circuit
board. An appropriate thermal resistance value should be used, considering the heat sink, circuit board
design and land pattern dimensions (provided for reference only).
(4) For other design considerations, see the Rectifiers databook or the Toshiba Semiconductor website.
9. Land Pattern Dimensions (for reference only)
Fig. 9.1 Land Pattern Dimensions for Reference Only (Unit: mm)
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2014-04-02
Rev.1.0