CRS06_13 Datasheet, PDF (3/5 Pages) Toshiba Semiconductor – TOSHIBA Schottky Barrier Rectifier Schottky Barrier Type

i_F – v_F
10
75°C
Tj = 125°C
1
25°C
0.1
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 10
Instantaneous forward voltage VF (V)
Ta max – I_{F (AV)}
Ceramic substrate (substrate size: 50 mm × 50 mm)
140
120
100
80
60
α = 60°
Rectangular
40 ^waveform
20 _{0° α360°}
ConductionIF ^(AV)
0 ^{angle αVR = 15 V}
120°
180° _DC
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
Average forward current I_{F (AV)} (A)
CRS06
P_{F (AV)} – I_{F (AV)}
0.5
DC
0.4
180°
0.3
120°
0.2
α = 60°
Rectangular
waveform
0.1
0° α 360°
Conduction angle α
0
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
Average forward current I_{F (AV)} (A)
Tℓ max – I_{F (AV)}
160
120
100
α = 60° 120°
180°
DC
80
Rectangular
60 waveform
40
0° α 360°
20
IF _(AV)
Conduction
angle α
0
VR = 15 V
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
Number of cycles
r_{th (j-a)} – t
10000
① Device mounted on a ceramic board:
Soldering land: 2 mm × 2 mm
② Device mounted on a glass-epoxy board:
1000 Soldering land: 6 mm × 6 mm
100
②
①
10
1
1
10
100
1000
10000 100000
Time t (ms)
3
2013-11-01