CRS04_13 Datasheet, PDF (3/5 Pages) Toshiba Semiconductor – TOSHIBA Schottky Barrier Rectifier Schottky Barrier Type

i_F – v_F
10
Tj = 150°C
1 _125°C
75°C
0.1
25°C
0.01
0
0.2 0.4 0.6 0.8 1.0 1.2 1.4
Instantaneous forward voltage VF (V)
Ta max – I_{F (AV)}
Ceramic substrate (substrate size: 50 mm × 50 mm)
160
140
120
100
α = 60°
80
Rectangular
waveform
60
120°
180° DC
40 _{0° α 360°}
20
IF _(AV)
Conduction
angle α
0 ^{VR = 15 V}
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
Average forward current I_{F (AV)} (A)
CRS04
P_{F (AV)} – I_{F (AV)}
0.8
0.7
DC
0.6
180°
0.5
120°
0.4
α = 60°
0.3
Rectangular
waveform
0.2
0.1
0
0.0
0° α 360°
Conduction angle α
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
Average forward current I_{F (AV)} (A)
Ta max – I_{F (AV)}
Glass-epoxy substrate (substrate size:
50 mm × 50 mm, soldering land: 6 mm × 6 mm)
160
Rectangular waveform
140
IF _(AV)
120
0° α 360°
VR = 20 V
Conduction angle α
100
80
60
40
20
α = 60°
120°
180° ^DC
0
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
Average forward current I_{F (AV)} (A)
r_{th (j-a)} – t
1000
100
10
1
0.1
1
②
①
① Device mounted on a ceramic board:
Soldering land: 2 mm × 2 mm
② Device mounted on a glass-epoxy board:
Soldering land: 6 mm × 6 mm
10
100
1000
10000 100000
time t (ms)
3
2013-11-01