CRS01_13 Datasheet, PDF (3/5 Pages) Toshiba Semiconductor – TOSHIBA Schottky Barrier Rectifier Schottky Barrier Type

i_F – v_F
10
Tj = 125°C
1
25°C
0.1
0
0.2
0.4
0.6
0.8
1.0
1.2
Instantaneous forward voltage VF (V)
Ta max – I_{F (AV)}
Ceramic substrate (substrate size: 50 mm × 50 mm)
120
100
80
60
Rectangular waveform
40
IF _(AV)
20 0° α 360°
Conduction angle α
α = 180°
DC
0
VR = 15 V
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
Average forward current I_{F (AV)} (A)
CRS01
P_{F (AV)} – I_{F (AV)}
0.6
0.5
0.4
0.3
α = 60°
0.2
DC
180°
120°
Rectangular
waveform
0.1
0° α 360°
Conduction angle α
0
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
Average forward current I_{F (AV)} (A)
Tℓ max – I_{F (AV)}
140
120
100
80
α = 60°
120°
180°
DC
60 _Rectangular
waveform
40
0° α 360°
20
IF _(AV)
Conduction angle α
0
VR = 15 V
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
Average forward current I_{F (AV)} (A)
r_{th (j-a)} – t
10000
① Device mounted on a ceramic board:
Soldering land: 2 mm × 2 mm
② Device mounted on a glass-epoxy board:
1000 Soldering land: 6 mm × 6 mm
100
②
①
10
1
0.001
0.01
0.1
1
Time t (s)
10
100
3
2013-11-01