CMH01_13 Datasheet, PDF (3/5 Pages) Toshiba Semiconductor – TOSHIBA High Efficiency Rectifier Silicon Epitaxial Type

100
Pulse test
i_F – v_F
10
150°C
75°C
1
Tj = 25°C
0.1
0.01
0.2 0.4
0.6 0.8 1.0 1.2
1.4 1.6
Instantaneous forward voltage v_F (V)
CMH01
P_{F (AV)} – I_{F (AV)}
3.2
Rectangular
2.8
Waveform
2.4 ^0° _180°
2.0
360°
1.6
1.2
0.8
0.4
0
0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2
Average forward current I_{F (AV)} (A)
Tℓ max – I_{F (AV)}
160
140
120
100
80
60 Rectangular
Waveform
40
0°
20
180°
360°
0
0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2
Average forward current I_{F (AV)} (A)
160
140
120
100
80
60
40
20
0
0
Ta max – I_{F (AV)}
Device mounted on a glass-epoxy board:
board size: 50 mm × 50 mm
Soldering land: 6.0 mm × 6.0 mm
board thickness: 1.6 mm
Rectangular
Waveform
0°
180°
360°
0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2
Average forward current I_{F (AV)} (A)
1000
500
300
r_{th (j-a)} – t
Device mounted on a glass-epoxy board:
board size: 50 mm × 50 mm
Soldering land: 2.1 mm × 1.4 mm
board thickness: 1.6 mm
100
50
Device mounted on a glass-epoxy board:
30
board size: 50 mm × 50 mm
Soldering land: 6.0 mm × 6.0 mm
board thickness: 1.6 mm
10
5
Device mounted on a ceramic board:
3
board size: 50 mm × 50 mm
Soldering land: 2.0 mm × 2.0 mm
board thickness: 0.64 mm
1
0.001 0.003 0.01 0.03 0.1 0.3
1
3
10
30
100 300 1000
Time t (s)
3
2013-11-01