2SK3569_06 Datasheet, PDF (3/6 Pages) Toshiba Semiconductor – Silicon N Channel MOS Type Switching Regulator Applications

I_D – V_DS
10
COMMON SOURCE
6
Tc = 25°C
PULSE TEST
8
10,8
6
4
2
5.3
5.1
5
4.8
4.6
4.4
4.2
VGS = 4V
0
0
2
4
6
8
10
DRAIN-SOURCE VOLTAGE V_DS (V)
2SK3569
I_D – V_DS
20
10
8
COMMON SOURCE
6
Tc = 25°C
PULSE TEST
16
5.5
5.25
12
5
8
4.75
4.5
4
VGS = 4 V
0
0
10
20
30
40
DRAIN-SOURCE VOLTAGE V_DS
50
(V)
I_D – V_GS
20
COMMON SOURCE
VDS = 20 V
16
PULSE TEST
12
8
Tc = −55°C
100
4
25
0
0
2
4
6
8
GATE-SOURCE VOLTAGE V_GS
10
(V)
V_DS – V_GS
10
COMMON SOURCE
Tc = 25℃
8
PULSE TEST
6
ID = 10 A
4
5
2
2.5
0
0
4
8
12
16
20
GATE-SOURCE VOLTAGE V_GS (V)
⎪Y_fs⎪ – I_D
100
10
1
0.1
0.1
Tc = −55°C
25
100
COMMON SOURCE
VDS = 20 V
PULSE TEST
1
10
100
DRAIN CURRENT I_D (A)
R_{DS (ON)} – I_D
10
COMMON SOURCE
Tc = 25°C
PULSE TEST
1
VGS = 10 V､15V
0.1
0.1
1
10
100
DRAIN CURRENT I_D (A)
3
2006-11-08