2SK3565_06 Datasheet, PDF (3/6 Pages) Toshiba Semiconductor – Silicon N Channel MOS Type Switching Regulator Applications

5
COMMON
SOURCE
Tc = 25°C
4 _{PULSE TEST}
I_D – V_DS
8
6
10
5.5
5.25
3
5
2
4.75
1
VGS = 4.5 V
0
0
4
8
12
16
20
24
DRAIN-SOURCE VOLTAGE V_DS (V)
2SK3565
6
COMMON
SOURCE
5 Tc = 25°C
PULSE TEST
4
I_D – V_DS
10
8
6
5.5
5.25
3
5
2
4.75
1
VGS = 4 .5V
0
0
10
20
DRAIN-SOURCE VOLTAGE V_DS
30
(V)
I_D – V_GS
10
COMMON SOURCE
8 ^{VDS = 20 V}
PULSE TEST
6
4
Tc = −55°C
2
100
25
0
0
2
4
6
8
GATE-SOURCE VOLTAGE V_GS
10
(V)
V_DS – V_GS
20
COMMON SOURCE
Tc = 25℃
14
PULSE TEST
12
ID = 5 A
8
3
4
1.5
0
0
4
8
12
16
20
GATE-SOURCE VOLTAGE V_GS (V)
⎪Y_fs⎪ – I_D
10
Tc = −55°C
25
100
1
0.1
0.1
COMMON SOURCE
VDS = 20 V
PULSE TEST
1
10
DRAIN CURRENT I_D (A)
R_{DS (ON)} – I_D
10
COMMON SOURCE
Tc = 25°C
PULSE TEST
5
3
VGS = 10 V､15V
1
0.01
0.1
1
10
DRAIN CURRENT I_D (A)
3
2006-11-10