2SD2414_09 Datasheet, PDF (3/5 Pages) Toshiba Semiconductor – High Current Switching Applications

I_C – V_CE
8
160 100 80
Common emitter
Tc = 25°C
6
60
40
4
30
20
2
IB = 10 mA
0
0
2
4
6
8
10
Collector-emitter voltage V_CE (V)
V_CE – I_C
1.2
Common emitter
Tc = 100°C
1.0
IB = 20 mA
0.8
100 200
0.6
300
400
0.4
500
700
600
0.2
0
0
1
2
3
4
5
6
7
Collector current I_C (A)
2SD2414(SM)
V_CE – I_C
1.2
Common emitter
Tc = 25°C
1.0
60 100 150 200 300 400
0.8
IB = 30 mA
0.6
0.4
500
600
700
0.2
0
0
1
2
3
4
5
6
7
8
Collector current I_C (A)
V_CE – I_C
1.2
Common emitter
Tc = −55°C
1.0
IB = 30 mA
0.8
150 200 300 400
60 100
0.6
0.4
500
700
600
0.2
0
0
1
2
3
4
5
6
7
8
Collector current I_C (A)
h_FE – I_C
500
Common emitter
300
VCE = 1 V
Tc = 100°C
25
100
50
−55
30
10
5
0.03
0.1
0.3
1
3
10
Collector current I_C (A)
V_{CE (sat)} – I_C
2
Common emitter
1 IC/IB = 10
0.5
0.3
0.1
0.05
0.02
0.02
Tc = 100°C
25
−55
0.1
0.3
1
3
10
Collector current I_C (A)
3
2009-11-11