2SC5785 Datasheet, PDF (3/5 Pages) Toshiba Semiconductor – TOSHIBA Transistor Silicon NPN Epitaxial Type

I_C – V_CE
2.4
40 30
60
2
20
1.6
1.2
0.8
10
8
6
4
IB = 2 mA
Common emitter
0.4
Ta = 25°C
Single nonrepetitive
pulse
0
0
0.4
0.8
1.2
Collector-emitter voltage V_CE (V)
V_{CE (sat)} – I_C
1 _{Common emitter}
IC/IB = 50
Single nonrepetitive pulse
0.1
Ta = 100°C
25
0.01
−55
0.001
0.001
0.01
0.1
1
10
Collector current I_C (A)
2SC5785
h_FE – I_C
10000 _{Common emitter}
VCE = 2 V
Single nonrepetitive pulse
1000
Ta = 100°C
25
−55
100
10
0.001
0.01
0.1
1
10
Collector current I_C (A)
V_{BE (sat)} – I_C
10 _{Common emitter}
IC/IB = 50
Single nonrepetitive
pulse
25 ^−55
1
Ta = 100°C
0.1
0.001
0.01
0.1
1
10
Collector current I_C (A)
I_C – V_BE
2
Common emitter
VCE = 2 V
Single nonrepetitive pulse
1.6
1.2
0.8
Ta = 100°C
25
0.4
−55
0
0
0.4
0.8
1.2
1.6
Base-emitter voltage V_BE (V)
3
2001-12-17