2SC5714 Datasheet, PDF (3/5 Pages) Toshiba Semiconductor – TOSHIBA Transistor Silicon NPN Epitaxial Type

I_C – V_CE
6 _{Common emitter}
Ta = 25°C
Single nonrepetitive pulse
5
60
50
40
30
4
20
3
10
2
5
1
IB = 2 mA
0
0
0.1
0.2
0.3
0.4
0.5
Collector-emitter voltage V_CE (V)
V_{CE (sat)} – I_C
1 _{Common emitter}
IC/IB = 50
Single nonrepetitive pulse
0.1
Ta = 100°C
-55°C
0.01
25°C
0.001
0.001
0.01
0.1
1
10
Collector current I_C (A)
2SC5714
1000
25
-55
h_FE – I_C
Ta = 100°C
100
Common emitter
VCE = 2 V
Single nonrepetitive
pulse
10
0.001
0.01
0.1
1
10
Collector current I_C (A)
V_{BE (sat)} – I_C
10
Common emitter
IC/IB = 50
Single nonrepetitive pulse
1
-55
Ta = 100°C
25
0.1
0.001
0.01
0.1
1
10
Collector current I_C (A)
I_C – V_BE
6 _{Common emitter}
VCE = 2 V
Single nonrepetitive pulse
5
Ta = 100°C 25 -55
4
3
2
1
0
0
0.2
0.4
0.6
0.8
1
1.2
Base-emitter voltage V_BE (V)
3
2001-12-17