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2SC5712_06 Datasheet, PDF (3/5 Pages) Toshiba Semiconductor – High-Speed Switching Applications | |||
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IC â VCE
4
Common emitter
Ta = 25°C
Single nonrepetitive
70
60 50 pulse
3
40
30
20
2
10
5
1
2
IB = 1 mA
0
0
0.2
0.4
0.6
0.8
1
Collector-emitter voltage VCE (V)
VCE (sat) â IC
1
Common emitter
β = 50
Single nonrepetitive
pulse
25
0.1
Ta = 100°C
â55
0.01
0.001
0.001
0.01
0.1
1
Collector current IC (A)
2SC5712
10000
Common emitter
VCE = 2 V
Single nonrepetitive
pulse
hFE â IC
1000
Ta = 100°C
25
â55
100
10
0.001
0.01
0.1
1
Collector current IC (A)
VBE (sat) â IC
100
Common emitter
IC/IB = 50
Single nonrepetitive
pulse
10
1
0.1
0.001
25
â55
Ta = 100°C
0.01
0.1
1
Collector current IC (A)
3
Common emitter
VCE = 2 V
Single nonrepetitive
pulse
2
VBE â IC
Ta = 100°C
1
25 â55
0
0
0.4
0.8
1.2
1.6
Collector current IC (A)
3
2006-07-26
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