2SC5712 Datasheet, PDF (3/5 Pages) Toshiba Semiconductor – TOSHIBA Transistor Silicon NPN Epitaxial Type

I_C – V_CE
4
Common emitter
Ta = 25°C
Single nonrepetitive
70
60 50 ^pulse
3
40
30
20
2
10
5
1
2
IB = 1 mA
0
0
0.2
0.4
0.6
0.8
1
Collector-emitter voltage V_CE (V)
V_{CE (sat)} – I_C
1 _{Common emitter}
β = 50
Single nonrepetitive
pulse
25
0.1
Ta = 100°C
−55
0.01
0.001
0.001
0.01
0.1
1
Collector current I_C (A)
2SC5712
10000 _{Common emitter}
VCE = 2 V
Single nonrepetitive
pulse
h_FE – I_C
1000
Ta = 100°C
25
−55
100
10
0.001
0.01
0.1
1
Collector current I_C (A)
V_{BE (sat)} – I_C
100 _{Common emitter}
IC/IB = 50
Single nonrepetitive
pulse
10
1
0.1
0.001
25
−55
Ta = 100°C
0.01
0.1
1
Collector current I_C (A)
3
Common emitter
VCE = 2 V
Single nonrepetitive
pulse
2
V_BE – I_C
Ta = 100°C
1
25 _−55
0
0
0.4
0.8
1.2
1.6
Collector current I_C (A)
3
2001-12-17