2SC5465_05 Datasheet, PDF (3/4 Pages) Toshiba Semiconductor – Switching Regulator and High Voltage Switching

2SC5465
1000
Common emitter
Tc = 25°C
800
120
I_C – V_CE
600
400
200
100
80
60
40
30
20
10
IB = 5 mA
0
0
2
4
6
8
10
Collector-emitter voltage V_CE (V)
V_{CE (sat)} – I_C
3
1
0.3
Tc = 100°C
0.1
−55
25
0.03
Common emitter
IC/IB = 5
0.01
1
3
10
30
100 300
Collector current I_C (mA)
1000
I_C – V_BE
800
Common emitter
VCE = 5 V
600
400
200
Tc = 100°C
25 −55
0
0
0.2
0.4
0.6
0.8
1.0
1.2
Base-emitter voltage V_BE (V)
h_FE – I_C
300
100
Tc = 100°C
30
25
−55
10
3
Common emitter
VCE = 5 V
1
1
3
10
30
100
300
Collector current I_C (mA)
1000
10
3
1
0.3
0.1
0.05
1
V_{BE (sat)} – I_C
Common emitter
IC/IB = 5
25
−55
Tc = 100°C
3
10
30
100
300
Collector current I_C (mA)
1000
Safe Operating Area
3
IC max (pulsed)*
1
IC max
(continuous)
1 ms*
10 µs*
100 µs*
0.3
DC operation
Tc = 25°C
0.1
10 ms*
0.03
100 ms*
0.01
*: Single nonrepetitive pulse
Tc = 25°C
0.003 _{Curves must be derated}
linearly with increase in
temperature.
0.001
10
30
100
300
VCEO max
1000
3000
Collector-emitter voltage V_CE (V)
3
2005-02-01