2SA2059 Datasheet, PDF (3/5 Pages) Toshiba Semiconductor – SILICON PNP EPITAXIAL TYPE

2SA2059
I_C – V_CE
−6
−5
−100
−80
−60
−4
−40
−3
−20
−2
−10
IB = −5 mA
−1
Common emitter
Ta = 25°C
Single nonrepetitive pulse
0
0
−0.4
−0.8
−1.2
−1.6
−2.0
−2.4
Collector-emitter voltage V_CE (V)
10000
Common emitter
VCE = −2 V
Single
nonrepetitive
pulse
1000
h_FE – I_C
Ta = 100°C
25
−55
100
10
1
−0.001
−0.01
−0.1
−1
−10
Collector current I_C (A)
−10
Common emitter
IC/IB = 30
Single
nonrepetitive
pulse
−1
V_{CE (sat)} – I_C
−0.1
−0.01
Ta = 100°C
−55
25
−0.001
−0.001
−0.01
−0.1
−1
−10
Collector current I_C (A)
−100
Common emitter
IC/IB = 30
Single
nonrepetitive
pulse
−10
V_{BE (sat)} – I_C
−55
−1
25
−0.1
Ta = 100°C
−0.01
−0.001
−0.01
−0.1
−1
−10
Collector current I_C (A)
−5
Common emitter
VCE = −2 V
−4 ^{Single nonrepetitive}
pulse
I_C – V_BE
−3
−2
Ta = 100°C
25 −55
−1
0
0
−0.4
−0.8
−1.2
−1.6
Base-emitter voltage V_BE (V)
3
2001-10-29