TPS851 Datasheet, PDF (2/12 Pages) Toshiba Semiconductor – TOSHIBA Photo IC Silicon Epitaxial Planar

Recommended Operating Conditions
Characteristics
Supply voltage
Symbol
V_CC
Min Typ. Max Unit
2.2
¾
5.5
V
TPS851
Electrical and Optical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min Typ. Max Unit
Supply current
Light current (1)
Light current (2)
Light current (3)
I_CC
V_CC = 3 V, E_V = 1000 lx
R_L = 1 kW
(Note 2) ^¾
620
¾
mA
I_L (1)
V_CC = 3 V, E_V = 100 lx
¾
(Note 2), (Note 4)
62
¾
mA
I_L (2)
V_CC = 3 V, E_V = 10 lx
3.7
(Note 3), (Note 4)
¾
7.4
mA
I_L (3)
V_CC = 3 V, E_V = 100 lx
37
(Note 3), (Note 4)
¾
74
mA
Light current ratio
Dark current
Saturation output voltage
Peak sensitivity wavelength
Switching time
Rise time
Fall time
IL (1)
IL (3)
I_LEAK
V_O
lp
t_r
t_f
¾
¾
1.2
1.7
V_CC = 3.3 V, E_V = 0
¾
¾ 0.17 mA
V_CC = 3 V, R_L = 150 kW, E_V = 100 lx
2.2 2.35 ¾
V
(Note 3)
¾
¾
600
¾
nm
V_CC = 3 V, R_L = 5 kW
¾ 0.07
1
ms
(Note 5) ¾
0.4
2
Note 2: CIE standard A light source is used (color temperature = 2856K, approximated incandescence light).
Note 3: Fluorescence light is used as light source. However, white LED is substituted in a mass-production process.
I_L classification I_L (3) ® A: 37 mA to 62 mA, B: 44 mA to 74 mA
Note 4: Light current measurement circuit
Light
source
V_CC
I_L
TPS851
A
OUT
Note 5: Rise time/fall time time measurement method
Pulse drive
White LED
V_CC
TPS851
OUT
R_L
I_F
1.5 V
V_OUT
GND
t_r
2
90%
10%
t_f
2002-04-17