TPS820_07 Datasheet, PDF (2/5 Pages) Toshiba Semiconductor – Silicon Epitaxial Planar

Pin Configuration
TPS820(B,F)
Current
AMP.
3. V_CC
2. OUT
1. GND
Optical and Electrical Characteristics (Ta = 25°C, V_CC = 5 V)
Characteristics
Symbol
Test Condition
Min Typ. Max Unit
Current consumption
Light current (1)
Light current (2)
Output linearity
Saturation output voltage
Dark current
Peak sensitivity wavelength
Rise time
Fall time
I_CC
I_L(1)
I_L(2)
E = 0, I_L must be open between
pins
⎯ 0.017 1
μA
E = 0.01 mW/cm²
(Note2) 150
⎯
600
μA
E = 0.1 mW/cm²
(Note2) 1.5
⎯
6
mA
I_L(2)/I_L(1)
V_OUT(sat)
⎯
E = 0.1 mW/cm²
R_L = 10 kΩ
8
10
12
⎯
(Note2)
4.1 4.2
⎯
V
I_D
E=0
⎯
⎯
0.5 μA
λ_p
⎯
⎯
870
⎯
nm
t_r
V_OUT = 2.5 V
⎯
250
⎯
μs
t_f
R_L = 10 kΩ
(Note3) ⎯
700
⎯
μs
Note 2: The light used is a CIE standard A light source (a standard tungsten bulb with a color temperature of 2856K)
Note 3: Switching time measurement circuit and waveform
Pulse drive
V_CC
0.01 μF
TPS820
V_OUT
R_L
I_F
V_OUT
t_r
90%
10%
t_f
Precautions
• When this device is used in combination with an LED lamp, the lamp must be an infrared LED lamp.
• To stabilize the power line, insert a bypass capacitor of up to 0.01 μF between V_CC and GND, close to the device.
• When the power is turned on, the output value will fluctuate for 1 ms as the internal circuit stabilizes.
2
2007-10-01